Indigenous development of silicon carbide wafers, GaN HEMT
Visakhapatnam: Solid State Physics Laboratory (SSPL), a DRDO laboratory successfully developed indigenous processes for ...
DRDO develops Silicon Carbide Wafers, GaN HEMT
Solid State Physics Laboratory a DRDO laboratory has successfully developed indigenous processes for growing and manufacturing 4-inch diameter Silicon Carbide ...
Compoundsemiconductor.net2d
India's DRDO announces GaN and SiC milestones
Compound Semiconductor™ is an Angel Business Communications publication.
Tech Xplore on MSN2mon
Developing GaN transistors and high-power amplifiers for millimeter wave satellite communications
to develop high-electron mobility transistors (HEMTs) and amplifier circuits for highly efficient satellite communication ...
Electronics Weekly9d
1,700V GaN mosfet IC from Power Integrations
Power Integrations has announced industry’s first 1,700V GaN transistor – as far as the company can tell. It is integrated ...
Domain-b2d
DRDO lab develops silicone carbide wafers, gallium nitride transistors for MMICs
Solid State Physics Laboratory (SSPL), a research arm of the Defence Research and Development Organisation (DRDO), has ...
DRDO’s solid state physics laboratory develops Silicon Carbide and GaN Technology for Next-Gen applications
The Solid State Physics Laboratory (SSPL), part of India’s Defence Research and Development Organisation (DRDO), has achieved ...
AFP9d
Power Integrations Launches 1700 V GaN Switcher IC, Setting New Benchmark for Gallium Nitride Technology
Radu Barsan, vice president of technology at Power Integrations, said, “Our rapid pace of GaN development has delivered three ...
New Electronics9d
Power Integrations launches 1700 V GaN switcher IC
Power Integrations has introduced a new member of its InnoMux-2 family of single-stage, independently regulated multi-output ...
Compoundsemiconductor.net7d
EPC Space launches rad Hard HEMTKY line
Compound Semiconductor™ is an Angel Business Communications publication.
electronicsforu8d
SMD Power Modules For High Performance Gate Drives
With flexible input options, dual configurable outputs, and advanced protection features, these modules ensure optimal ...
CORRECTING and REPLACING Power Integrations Launches 1700 V GaN Switcher IC, Setting New Benchmark for Gallium Nitride Technology
V GaN InnoMux-2 IC delivers efficiency of better than 90% from a 1000 VDC bus, supplying up to 70 W from three accurately ...