Visakhapatnam: Solid State Physics Laboratory (SSPL), a DRDO laboratory successfully developed indigenous processes for ...

Solid State Physics Laboratory a DRDO laboratory has successfully developed indigenous processes for growing and manufacturing 4-inch diameter Silicon Carbide ...

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Solid State Physics Laboratory (SSPL), a research arm of the Defence Research and Development Organisation (DRDO), has ...

Radu Barsan, vice president of technology at Power Integrations, said, "Our rapid pace of GaN development has delivered three world-first voltage ratings in less than two years: 900V, 1250V, and now ...

wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) up to 150W. A statement from the Ministry of Defence stated that these advancements also include Monolithic ...

wafers and fabricating gallium nitride (GaN) high electron mobility transistors (HEMTs) upto 150W and Monolithic Microwave Integrated Circuits (MMICs) up to 40W for applications up to X-band ...

Power Integrations’ gallium-nitride power-conversion devices rated for 1,700 V marks yet another incursion on markets that, ...

Rohm Semiconductor has announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

Company ships early bare die test samples of new low on-resistance devices for automotive traction inverters Toshiba ...