One example of this is the evolution of compound semiconductors that use silicon carbide (SiC) and gallium nitride (GaN) for ...

Power Integrations, a provider of high-voltage integrated circuits for energy-efficient power conversion, has introduced a ...

Texas Instruments (TXN) announced it has begun production of gallium nitride-based power semiconductors at its factory in Aizu, Japan. Coupled with its existing GaN manufacturing in Dallas ...

Around 2010, Speck began long-term research with fellow UCSB materials professors Claude Weisbuch, an experimentalist, and Chris van de Walle, a computational theoretician, to explore a phenomenon ...

Radu Barsan, vice president of technology at Power Integrations, said, “Our rapid pace of GaN development has delivered three world-first voltage ratings in a span of less than two years: 900 V, 1250 ...

TI's GaN-based semiconductors are in production and available now. TI enables the most energy-efficient, reliable and power-dense end products with the widest portfolio of integrated GaN-based ...

The new device features the industry’s first 1700 V gallium nitride switch, fabricated using the company’s proprietary PowiGaN™ technology. The 1700 V rating further advances the state-of ...

Gallium is needed for the production of gallium nitride (GaN), a wide-bandgap material that can handle higher amounts of power than silicon, meaning GaN-based chips can be more efficient and durable ...

1700 V GaN InnoMux-2 IC delivers efficiency of better than 90 percent from a 1000 VDC bus, supplying up to 70 W from three accurately regulated outputs SAN JOSE, Calif., November 05, 2024 ...

Subhead of release should read: 1700 V GaN InnoMux-2 IC delivers efficiency of better than 90 percent from a 1000 VDC bus, supplying up to 70 W from three accurately regulated outputs (instead of ...

1700 V GaN InnoMux-2 IC delivers efficiency of better than 90 percent from a 1000 VDC bus, supplying up to 70 W from three accurately regulated outputs Subhead of release should read: 1700 V GaN ...