Phys.org on MSN6d
Plasma technique doubles etch rate for 3D NAND flash memoryTo store ever more data in electronic devices of the same size, the manufacturing processes for these devices need to be ...
To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...
In a significant advancement for China's semiconductor industry, Yangtze Memory Technologies Co. (YMTC) has achieved a new ...
The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a plasma made from hydrogen fluoride.
The SSD memory with the highest cell density comes from YMTC. The manufacturer is ahead of Samsung, SK Hynix and other ...
Manufacturers are going to cut production of NAND flash memory production in 2025 because they are facing weak demand, says ...
The use of CCD as a memory device dates back to 1970 but was soon overshadowed by the byte-addressable DRAM. The technology ...
China's leading flash memory chip manufacturer, has achieved a significant technological breakthrough despite US sanctions, ...
Yangtze Memory Technologies Co. (YMTC) has pushed forward with a 3D NAND chip that includes 294 total layers, out of which ...
An artist’s representation of a hole etched into alternating layers of silicon oxide and silicon nitride using plasma, to make 3D NAND flash memory. Researchers want to refine how they make these ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback