Power Integrations’ gallium-nitride power-conversion devices rated for 1,700 V marks yet another incursion on markets that, ...

One example of this is the evolution of compound semiconductors that use silicon carbide (SiC) and gallium nitride (GaN) for ...

Power Integrations, a provider of high-voltage integrated circuits for energy-efficient power conversion, has introduced a ...

High Energy Electron Dispersion, Physics, and Technology,” is an outgrowth of work he has been pursuing for some 15 years in ...

Texas Instruments (TXN) announced it has begun production of gallium nitride-based power semiconductors at its factory in Aizu, Japan. Coupled with its existing GaN manufacturing in Dallas ...

TI's GaN-based semiconductors are in production and available now. TI enables the most energy-efficient, reliable and power-dense end products with the widest portfolio of integrated GaN-based ...

Radu Barsan, vice president of technology at Power Integrations, said, “Our rapid pace of GaN development has delivered three world-first voltage ratings in a span of less than two years: 900 V, 1250 ...

The new device features the industry’s first 1700 V gallium nitride switch, fabricated using the company’s proprietary PowiGaN™ technology. The 1700 V rating further advances the state-of ...

Gallium is needed for the production of gallium nitride (GaN), a wide-bandgap material that can handle higher amounts of power than silicon, meaning GaN-based chips can be more efficient and durable ...

1700 V GaN InnoMux-2 IC delivers efficiency of better than 90 percent from a 1000 VDC bus, supplying up to 70 W from three accurately regulated outputs SAN JOSE, Calif., November 05, 2024 ...